(Hong Kong)
Product Summary
The BUK7620-100A,118 is an N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. The BUK7620-100A,118 is used in Automotive and general purpose power switching: 12 V, 24 V and 42 V loads; Motors, lamps and solenoids.
Parametrics
BUK7620-100A,118 absolute maximum ratings: (1)VDS drain-source voltage (DC): 100 V; (2)VDGR drain-gate voltage (DC): 100 V; (3)VGS gate-source voltage (DC): ±20 V; (4)ID drain current (DC): 63 A; (5)IDM peak drain current: 253 A; (6)Ptot total power dissipation: 200 W; (7)Tstg storage temperature: -55 to +175 ℃; (8)Tj operating junction temperature: -55 to +175 ℃.
Features
BUK7620-100A,118 features: (1)TrenchMOS technology; (2)Q101 compliant; (3)175 ℃ rated; (4)Standard level compatible.
Diagrams
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 BUK7620-100A,118 |
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Data Sheet |
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