(Hong Kong)
Product Summary
The SUD50P04-15-E3 is a P-Channel 40-V (D-S), 175℃ MOSFET.
Parametrics
SUD50P04-15-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: –40V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current ID: –50A at TC = 25℃; -40A at TC = 100℃; (4)Pulsed Drain Current IDM: –150A; (5)Continuous Source Current (Diode Conduction) IS: –50A; (6)Maximum Power Dissipation PD: 100W at TC = 25℃; 3W at TA = 25℃; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175℃.
Features
SUD50P04-15-E3 specification: (1)Drain-Source Breakdown Voltage V(BR)DSS: –40V; (2)Gate Threshold Voltage VGS(th): –1.0V; (3)Gate-Body Leakage IGSS: ±100 nA; (4)Zero Gate Voltage Drain Current IDSS: –1μA; (5)On-State Drain Current ID(on): –120 A; (6)Drain-Source On-State Resistance rDS(on): 0.012 to 0.015Ω; (7)Forward Transconductance gfs: 20S.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SUD50P04-15-E3 |
Vishay/Siliconix |
MOSFET 40V 50A 100W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SUD50N02-04P |
Vishay/Siliconix |
MOSFET 20V 34A 8.3W |
Data Sheet |
Negotiable |
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SUD50N02-04P-E3 |
Vishay/Siliconix |
MOSFET 20V 34A 8.3W |
Data Sheet |
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SUD50N02-06 |
Vishay/Siliconix |
MOSFET 20V 30A 100W |
Data Sheet |
Negotiable |
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SUD50N02-06-E3 |
Vishay/Siliconix |
MOSFET 20V 30A 100W |
Data Sheet |
Negotiable |
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SUD50N02-06P |
Other |
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Data Sheet |
Negotiable |
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SUD50N02-06P-E3 |
Vishay/Siliconix |
MOSFET 20V 26A 65W |
Data Sheet |
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