Product Summary
The IR2181SPBF is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The IR2181SPBF features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200 volts.
Parametrics
IR2181SPBF absolute maximum ratings: (1)High Side Floating Supply Voltage:-0.3 to 1225V; (2)High Side Floating Supply Offset Voltage:VB - 25 to VB + 0.3V; (3)High Side Floating Output Voltage:VS - 0.3 to VB + 0.3V; (4)Low Side Fixed Supply Voltage:-0.3 to 25V; (5)Low Side Output Voltage:-0.3 to VCC + 0.3V; (6)Logic Supply Voltage:-0.3 to VSS + 25V; (7)Logic Supply Offset Voltage:VCC - 25 to VCC + 0.3V; (8)Logic Input Voltage (HIN, LIN & SD):VSS - 0.3 to VDD + 0.3V; (9)Junction Temperature:125℃; (10)Storage Temperature:-55 to 150℃; (11)Lead Temperature (Soldering, 10 seconds):300℃.
Features
IR2181SPBF features: (1)Gate drive supply range from 12 to 20V; (2)Undervoltage lockout for both channels; (3)3.3V logic compatible; (4)Separate logic supply range from 3.3V to 20V; (5)Logic and power ground ±5V offset; (6)CMOS Schmitt-triggered inputs with pull-down; (7)Cycle by cycle edge-triggered shutdown logic; (8)Matched propagation delay for both channels; (9)Outputs in phase with inputs; (10)Also available LEAD-FREE (PbF).
Diagrams
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