Product Summary
The BTS4140N is a smart high-side power switch one channel: 1 x 1Ω. The BTS4140N is a N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in Smart SIPMOS technology. The device provides embedded protective functions. The applications of the BTS4140N are All types of resistive, inductive and capacitive loads, Current controlled power switch for 12V, 24V and 42V DC applications, Driver for electromechanical relays, Signal amplifier.
Parametrics
BTS4140N absolute maximum ratings: (1)Supply voltage Vbb: 60 V; (2)Load current IL: self limited A; (3)Maximum current through the input pin ( DC ) IIN: ±15 mA; (4)Operating temperature Tj: -40 to +150℃; (5)Storage temperature Tstg: -55 to +150℃; (6)Power dissipation TA = 25℃ Ptot: 1.7 W.
Features
BTS4140N features: (1)Current controlled input; (2)Short circuit protection; (3)Current limitation; (4)Overload protection; (5)Overvoltage protection (including load dump); (6)Switching inductive loads; (7)Clamp of negative voltage at output with inductive loads; (8)Thermal shutdown with restart; (9)ESD - Protection; (10)Loss of GND and loss of Vbb protection; (11)Very low standby current.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BTS4140N |
Infineon Technologies |
Power Switch ICs - POE / LAN Smart High Side MINI-PROFET |
Data Sheet |
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Quantity | |||||||||||||||
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Data Sheet |
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BTS409L1-E3062A |
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Negotiable |
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Negotiable |
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BTS410E2 |
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