Product Summary
The SPI20N65C3 is a cool mos power transistor.
Parametrics
SPI20N65C3 absolute maximum ratings: (1)Continuous drain current TC = 25 ℃: 20.7A; (2)Continuous drain current TC = 100 ℃: 13.1A; (3)Pulsed drain current, tp limited by Tjmax : 62.1A; (4)Avalanche energy, single pulse ID=3.5A, VDD=50V: 690mJ; (5)Avalanche energy, repetitive tAR limited by Tjmax ID=7A,VDD=50V: 1mJ; (6)Avalanche current, repetitive tAR limited by Tjmax : 7 A; (7)Gate source voltage: ±20 V; (8)Gate source voltage AC (f >1Hz) : ±30 V; (9)Power dissipation, TC = 25℃: 34.5 W; (10)Operating and storage temperature: -55 to +150 ℃.
Features
SPI20N65C3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance.
Diagrams
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![]() SPI20N65C3 |
![]() Infineon Technologies |
![]() MOSFET COOL MOS N-CH 650V 20.7A |
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![]() SPI20N60CFD |
![]() Infineon Technologies |
![]() MOSFET COOL MOS PWR TRANS 650V 0.22 Ohms |
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![]() SPI20N65C3 |
![]() Infineon Technologies |
![]() MOSFET COOL MOS N-CH 650V 20.7A |
![]() Data Sheet |
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![]() SPI220LE |
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![]() SPI2501UH |
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![]() Negotiable |
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![]() SPI250EP |
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![]() SPI270LE |
![]() Other |
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![]() Negotiable |
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