Product Summary

The STB120NF10T4 is a STripFET II power MOSFET. The device is designed to minimize the on-resistance. The STB120NF10T4 is therefore suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. The STB120NF10T4 is used in audio amplifiers, power tools.

Parametrics

STB120NF10T4 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 100 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 100 V; (3)VGS Gate- source Voltage: ± 20 V; (4)ID Drain Current (continuous) at TC = 25℃: 120 A; (5)ID Drain Current (continuous) at TC = 100℃: 85 A; (6)IDM Drain Current (pulsed): 480 A; (7)Ptot Total Dissipation at TC = 25℃: 312 W; Derating Factor: 2.08 W/℃; (8)dv/dt Peak Diode Recovery voltage slope: 10 V/ns; (9)EAS Single Pulse Avalanche Energy: 550 mJ; (10)Tstg Storage Temperature: -55 to 175 ℃; (11)Tj Operating Junction Temperature: -55 to 175 ℃.

Features

STB120NF10T4 features: (1)typical rds(on) = 0.009 Ω; (2)exceptional dv/dt capability; (3)100% avalanche tested; (4)application oriented characterization; (5)surface-mounting d2pak (to-263) power package in tape & reel(suffix t4).

Diagrams

STB120NF10T4 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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100-250: $1.31
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