(Hong Kong)
Product Summary
The R1LV0416DSB-5SI#S0 is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas’s high-performance 0.15µm CMOS and TFT technologies. The R1LV0416DSB-5SI#S0 has realized higher density, higher performance and low power consumption. The R1LV0416DSB-5SI#S0 offers low power standby power dissipation; therefore, it is suitable for battery backup systems. The R1LV0416DSB-5SI#S0 is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch ball grid array.
Parametrics
R1LV0416DSB-5SI#S0 absolute maximum ratings: (1)Power supply voltage relative to VSS:-0.5 to +4.6V ; (2)Terminal voltage on any pin relative to VSS:-0.5 to VCC + 0.3V ; (3)Power dissipation:0.7W ; (4)Operating temperature1:-40 to +85℃; (5)Storage temperature range:-65 to +150℃; (6)Storage temperature range under bias:-40 to +85℃.
Features
R1LV0416DSB-5SI#S0 features: (1)Single 3.0 V supply: 2.7 V to 3.6 V; (2)Fast access time: 55/70 ns (max); (3)Power dissipation: Standby: 3 μW (typ) (VCC = 3.0 V); (4)Equal access and cycle times; (5)Common data input and output:Three state output; (6)Battery backup operation:2 chip selection for battery backup; (7)Temperature Range: -40 to +85℃.
Diagrams
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 R1LV0416DSB-5SI#S0 |
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IC SRAM 8BIT 55NS 32TSOP |
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R1LV0108ESF-7SI#S0 |
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IC SRAM 8BIT 70NS 32TSOP |
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R1LV0108ESF-7SR#B0 |
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IC SRAM 8BIT 70NS 32TSOP |
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R1LV0108ESF-7SR#S0 |
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IC SRAM 8BIT 70NS 32TSOP |
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R1LV0108ESP-5SI#B0 |
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IC SRAM 8BIT 55NS 32SOP |
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R1LV0108ESP-5SI#S0 |
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IC SRAM 8BIT 55NS 32SOP |
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R1LV0108ESP-5SR#B0 |
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IC SRAM 8BIT 55NS 32SOP |
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