(Hong Kong)
Product Summary
The IRF3007PBF is a Power MOSFET. It is designed for Automotive applications, this design of IRF3007PBF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the IRF3007PBF are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. The applications of it are 42 Volts Automotive Electrical Systems, Lead-Free.
Parametrics
IRF3007PBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V (Silicon limited):80A; (2)Continuous Drain Current, VGS @ 10V:56A; (3)Continuous Drain Current, VGS @ 10V (Package limited):75A; (4)Pulsed Drain Current:320A; (5)Power Dissipation:200W; (6)Linear Derating Factor:1.3W/℃; (7)Gate-to-Source Voltage:± 20V; (8)Single Pulse Avalanche Energy:280mJ; (9)Single Pulse Avalanche Energy Tested Value:946mJ; (10)Operating Junction and Storage Temperature Range:-55 to +175℃.
Features
IRF3007PBF features: (1)Ultra Low On-Resistance; (2)175℃ Operating Temperature; (3)Fast Switching; (4)Repetitive Avalanche Allowed up to Tjmax; (5)Automotive [Q101] Qualified.
Diagrams
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Pricing (USD) |
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 IRF3007PBF |
International Rectifier |
MOSFET |
Data Sheet |
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Quantity | ||||||||||||
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